oalib

OALib Journal期刊

ISSN: 2333-9721

费用:99美元

投稿

时间不限

2019 ( 7 )

2018 ( 12 )

2017 ( 7 )

2016 ( 380 )

自定义范围…

匹配条件: “<br>陈万军” ,找到相关结果约414465条。
列表显示的所有文章,均可免费获取
第1页/共414465条
每页显示
A Novel Structure with Multiple Equipotential Rings for Shielding the Influence of a High Voltage Interconnection
具有多等位环的高压屏蔽新结构MER-LDMOS耐压分析

Chen Wanjun,Zhang Bo,Li Zhaoji,<br>,张波,李肇基
半导体学报 , 2006,
Abstract: A novel structure with multiple equipotential rings(MER-LDMOS) for shielding the influence of a high voltage interconnection(HVI) is proposed,and its shielding model is explained and proved with 2D device simulation.The influences of various factors on the breakdown voltage of MER-LDMOS are discussed in detail,including the p-top dose,the length of equipotential ring,the distance between the equipotential rings,and the thickness of the SiO_2.A significant increase in the breakdown voltage is realized using the MER-LDMOS structure,and its breakdown voltage increases by more than 100% compared with that of conventional LDMOS.Furthermore,the proposed structure has the advantages of simple fabrication,large process tolerance,and small leakage current.It is a new method for shielding the influence a high voltage interconnection in a high voltage integrated circuit.
Realizing High Breakdown Voltage SJ-LDMOS on Bulk Silicon Using a Partial n-Buried Layer
具有部分n埋层的高压SJ-LDMOS器件新结构

Chen Wanjun,Zhang Bo,Li Zhaoji,<br>,张波,李肇基
半导体学报 , 2007,
Abstract: A new design concept is proposed to eliminate the substrate-assisted depletion effect that significantly degrades the breakdown voltage (BV) of conventional super junction-LDMOS.The key feature of the new concept is that a partial buried layer is implemented which compensates for the charge interaction between the p-substrate and SJ region,realizing high breakdown voltage and low on-resistance.Numerical simulation results indicate that the proposed device features high breakdown voltage,low on-resistance,and reduced sensitivity to doping imbalance in the pillars.In addition,the proposed device is compatible with smart power technology.
Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs
基于氟等离子体表面处理技术的AlGaN/GaN HEMT器件栅正向泄漏电流研究

Chen Wanjun,Zhang Jing,Zhang Bo,Chen Kevin Jing,<br>,张竞,张波,
半导体学报 , 2013,
Abstract: The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal-semiconductor barrier. Consequently, the gate forward leakage current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied.
A high performance carrier stored trench bipolar transistor with a field-modified P-base region
一种具有电场调制型P型基区的高性能CSTBT

Qi Yue,Wang Zhigang,Chen Wanjun,Zhang Bo,<br>齐跃,汪志刚,,张波
半导体学报 , 2013,
Abstract: 本文提出了一种具有电场调制型P型基区的新型高性能少子存储槽栅双极型晶体管(CSTBT)。本结构通过在漂移区中插入P型条使P型基区延伸至与栅极底部相平齐以实现对槽栅边缘处电场的调制,进而抑制了器件由于栅极边缘电场集聚而引起的提前击穿。新的P型基区结构中所包含的P型条还为少子空穴的输运提供了额外的通道,使器件的开关速度得到提高。仿真结果显示,相比于常规的CSTBT结构, 本文提出的新型CSTBT的耐压提高了近430 V,实现了雪崩击穿。同时,在相同的槽栅长度下,新型CSTBT的关断时间下降了0.3 μs(17%)。
Optimum Design of PSJ for High-Voltage Devices
PSJ高压器件的优化设计

Chen Wanjun,Zhang Bo,Li Zhaoji,Deng Xiaochuan,<br>,张波,李肇基,邓小川
半导体学报 , 2006,
Abstract: 基于Semi-SJ(super junction)结构,提出了SJ的比例可以从0~1渐变的PSJ(partial super junction)高压器件的概念.通过对PSJ比导通电阻的分析,得到了PSJ高压器件比导通电阻优化设计的理论公式.计算了不同击穿电压的比导通电阻,并与二维器件模拟结果和实验结果相比较.讨论了BAL(bottom assist layer)部分穿通因素η、p型区深度归一化参数r、p型区深宽比A以及PSJ漂移区掺杂浓度是否统一对PSJ高压器件比导通电阻的影响.其理论结果和器件模拟结果相吻合,为设计与优化PSJ高压器件提供了理论依据.PSJ结构特别适于制造工艺水平不高、很难实现大的p型区深宽比的情况,为现有工艺实现高压低导通电阻器件提供了一种新的思路.
Experimental study of the anode injection efficiency reduction of 3.3-kV-class NPT-IGBTs due to backside processes
由背面工艺导致的3.3-kV NPT-IGBT阳极注入效率降低效应的实验研究

Jiang Huaping,Zhang Bo,Liu Chuang,Chen Wanjun,Rao Zugang,Dong Bin,<br>蒋华平,张波,刘闯,,饶祖刚,董彬
半导体学报 , 2012,
Abstract: The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors (NPT-IGBTs) due to backside processes is experimentally studied through comparing the forward blocking capabilities of the experiments and the theoretical breakdown model in this paper. Wafer lifetimes are measured by a μ-PCD method, and well designed NPT-IGBTs with a final wafer thickness of 500 μm are fabricated. The test results show higher breakdown voltages than the theoretical breakdown model in which anode injection efficiency reduction is not considered. This indicates that anode injection efficiency reduction must be considered in the breakdown model. Furthermore, the parameters related to anode injection efficiency reduction are estimated according to the experimental data.
Transformation of electronic state of Co3+ and its influence on the structural development in Li(AlxCo1-x)O2
Li(AlxCo1-x)O2晶体中Co3+电子态的变化及对结构演化的影响

Hao Wan-Jun,Li Chang,Wei Ying-Jin,Chen Gang,Xu Wu,<br>郝,李畅,魏英进,,许武
物理学报 , 2003,
Abstract: 研究了应用于锂二次电池正极的新型高能量密度存贮材料Li(AlxCo1-x)O2 (x=01—05)的磁性.发现Al3+的掺杂可导致Co3+中d电子自旋态发生变化,即有部分d电子进入高自旋态.伴随Co3+中电子状态的改变,材料结构演化也发生了相应变化,表现为c/a比增大明显减缓,较好地解释了材料结构对Vegard定律的正偏离.这对材料的微观结构与性能设计具有重要意义.
STUDIES OF THE IMPURITY EFFECTS ON CRYSTALLINE QUALITY BY HIGH-RESOLUTION X-RAY DIFFRACTION
高分辨X射线衍射研究杂质对晶体结构完整性的影响

LI CHAO-RONG,WU LI-JUN,CHEN WAN-CHUN,<br>李超荣,吴立,
物理学报 , 2001,
Abstract: Sr(NO 3) 2 single crystals with different impurities doped were grown from aqueous solutions. The distribution of impurities in Sr(NO 3) 2 crystals were investigated by electron probe micoranalysis. Results show that the distribution of impurities illustrates a compositional zoning behaviour. The Ba 2 has a higher concentration in the {100} growth sectors than in the {111} sectors. On the contrary, Pb 2 has a higher concentration in {111} growth sectors than in {100} sectors. The crystalline perfection of the pure and Ba 2 or Pb 2 doped Sr(NO 3) 2 crystals was studied by high-resolution X-ray rocking curve technique. The high-resolution X-ray rocking curve of the ideal Sr(NO 3) 2 crystal was theoretically calculated based on the dynamical X-ray diffraction theory. High-resolution X-ray diffraction results show that the crystalline quality in the growth sectors of the pure Sr(NO 3) 2 crystal is fairly high, since its experimental rocking curve is very close to the theoretical calculation. However, in the areas of the sector boundary the full width at half maximum of the rocking curve gets broader due to the lattice stress in the boundary area. The doping of impurities will deteriorate the quality of the crystal and induce an inhomogeneity behaviour of the crystalline quality. As for the Ba 2 doped Sr(NO 3) 2 crystal, the crystalline quality in {111} growth sectors is higher than that in {100} sectors. On the contrary, the crystalline quality in {100} growth sectors is higher than that in {111} sectors for Pb 2 doped Sr(NO 3) 2 crystal. This coincides well with the composition distributions of the dopants.
Effects of rice seedlings horizontal distribution on the dynamics of rice population, canopy light transmittance rate and panicle characteristics
秧苗平面分布对水稻群体动态、冠层透光率及穗部性状的影响

CHEN De-chun,YANG Wen-yu,REN Wan-jun,<br>德春,杨文钰,
应用生态学报 , 2007,
Abstract: The study with stronger tillering hybrid rice ' D-you 527' showed that the more the irregularity of the seedlings horizontal distribution, the more colony stem-tillers the plants would have. Such a difference was significant 34 days after transplanting, but not significant at full heading stage. After transplanting, the trend that the variation coefficient increased with increasing irregularity of horizontal distribution presented gradually, and the difference became significant after jointing stage. Comparing with uniform distribution, an irregular horizontal distribution of the seedlings could benefit the canopy light transmittance rate and the panicle characteristics of rice.
Irradiation Effects on Chlorinated Polyethylene Studied by NMR Spectroscopy
氯化聚乙烯辐射效应的NMR研究

CHEN Chun-li,ZHAO Xin,SUN Wan-fu,TANG Jun,<br>春丽,赵新,,
波谱学杂志 , 2008,
Abstract: 用1H NMR, 13C NMR谱, 二维谱, FT-IR等方法研究了氯化聚乙烯(CPE)在室温下限量空气中经60Co γ射线辐照后的辐照效应. 结果表明CPE在辐照过程中以发生裂解反应为主, 在裂解反应过程中伴随着HCl脱出, HCl的脱出量随着辐照剂量的增加而增加. 辐照后CPE样品的大分子结构发生相应变化, 序列结构为CH2CHClCHClCH2CHCl, CH2CH2CHClCH2CH2, CHCl CH2CHClCH2CH2, CHClCH2CHClCH2CHCl的单元数量减少, 但没有形成新的序列结构类型, T1 和T2值给出了有关辐照前后分子运动变化的信息.
第1页/共414465条
每页显示


Home
Copyright © 2008-2017 Open Access Library. All rights reserved.