oalib

OALib Journal期刊

ISSN: 2333-9721

费用:99美元

投稿

匹配条件: “Anhuai” ,找到相关结果约17条。
列表显示的所有文章,均可免费获取
第1页/共17条
每页显示
Cryptomelane(KxMn8-xO16): Natural active octahedral molecular sieve(OMS-2)
Cryptomelane(KxMn8-xO16): Natural active octahedral molecular sieve(OMS-2)

LU Anhuai,GAO Xiang,QIN Shan,WANG Changqiu,
LU Anhuai
,GAO Xiang,QIN Shan & WANG Changqiu

科学通报(英文版) , 2003,
Abstract: The Xiangtan manganese deposit (XTM) used to be considered a supergene oxide manganese ore in South China. We reported a new identification of the naturally outcropping cryptomelane by examining the physical, chemical and structural features of the XTM supergene oxide manganese ore. The MnO2 content was over 90%, K2O more than 3%, and water from 2.2%-3.1% which is similar to one in zeolite. The cell parameters of the cryptomelane were given as a0 = 0.9974 nm, b0 = 0.2863 nm, c0 = 0.9693 nm and β91.47(. There was a larger pseduotetragonal tunnel in the natural cryptomelane that was formed by MnO6] octahedral double chains with aperture of 0.462×0.466 nm2, filled with K cations resulting in some Mn3+ substituting for Mn4+ to balance the negative charges of structure. The finding is important not only for prospecting manganese resources in South China, but also in application of octahedral molecular sieve of natural cryptomelane as that developed in the tetragonal molecular sieve of natural zeolite over the past century. The XTM cryptomelane (OMS-2) may be the real mineral of the active octahedral molecular sieve in nature.
Ultra high-speed InP/InGaAs DHBTs with ft of 203 GHz
ft =203GHz的超高速InP/InGaAs双异质结晶体管

Su Yongbo,Cheng Wei,Liu Xinyu,Xu Anhuai,Xu Anhuai,Qi Ming,
苏永波
,金智,程伟,刘新宇,徐安怀,齐鸣

半导体学报 , 2009,
Abstract: 为了适应数字及模拟电路带宽的不断增加,我们在传统的台面结构基础上利用BCB钝化平坦化工艺技术,设计并研制了InP/InGaAs/InP双异质结双极型晶体管。我们研制的晶体管ft达到203GHz,是目前国内InP基DHBT的最高水平,发射极尺寸为1.0μm×20μm,电流增益β为166,击穿电压为4.34V,我们的器件采用了40nm高掺杂InGaAs基区,以及203nm含有InGaAsP复合式结构的集电区。该器件非常适合高速中功耗方面的应用。
One-step disposal of Cr (VI)-bearing wastewater by natural pyrrhotite
Anhuai Lu,Jie Chen,Junxian Shi,Xiaoying Lu,Junli Tang,Min Guo
Chinese Science Bulletin , 2000, DOI: 10.1007/BF02886224
Abstract: Cr(VI)-bearing wastewater can be treated by natural pyrrhotite which is used for reductant to reduce Cr(VI) and precipitant to precipitate Cr(III) simultaneously. The disposal products can be divided into three parts in the beakers, namely supernatant in the upper part, the yellowish colloidal precipitates in the middle part and the pyrrhotite in the lower part. The content of total Cr=Cr(VI)+Cr(III) in the supernatant liquid is 0.06 mg/L, which is lower than 1.5 mg/L of the discharge standard of China and near to 0.05 mg/L of the standard of potable water. This one-step disposal composing of both reduction and precipitation which is traditionally divided into two independent steps called reducing technology and precipitating technology respectively. The new method is of obvious economic advantage and favourable to decreasing surplus mud derived from adding Ca(OH)2 to precipitate Cr(III) traditionally so as to avoid recontamination. In fact, sodium sulfite (Na2SO3) used in disposal of Cr(VI) was traditionally produced from natural mineral of pyrrhotite (FeS). One molecule of FeS is 4 times more than that of Na2SO3 from a view point of rational use of mineral resources. Therefore the prospective of application of the one-step disposal of Cr(VI) method is full of promise.
Photocatalytic effect of nature and modified V-bearing rutile
Anhuai Lu,Yanjun Guo,Juan Liu,Fei Liu,Changqiu Wang,Ning Li,Qiaorong Li
Chinese Science Bulletin , 2004, DOI: 10.1360/03wd0612
Abstract: A natural rutile TiO2, which displays photocatalysis on degrading halohydrocarbon pollutants, was reported. The rutile contains up to 1.22% V2O5 (weight percent). Substitutions of Ti by V, as well as Fe, Cu and Zn, result in lattice distortions and defects. Grinding, heating and quenching modify the surface characteristics of rutile, and consequently increase its photoactivity. It is found that the heating and quenching treatments enhance visible-light absorption of rutile, especially at 1000 and 1100 °C. Ground rutile is effective to degrade tetrachloroethylene and trichloroethylene. While, heating at 1000 °C, and quenching at 1000 and 1100 °C distinctly improve degradation rate of samples. The special properties of the natural rutile have particular capabilities in photocatalytic oxidation, especially in degradation of halohydrocarbons.
A 162GHz Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor
Yu Jinyong,Yan Beiping,Su Shubing,Liu Xunchun,Wang Runmei,Xu Anhuai,Qi Ming,Liu Xinyu,
Yu Jinyong
,Yan Beiping,Su Shubing,Liu Xunchun,Wang Runmei,Xu Anhuai,Qi Ming,Liu Xinyu

半导体学报 , 2006,
Abstract: 报道了发射极自对准的InP基异质结双极型晶体管.在集电极电流Ic=34.2mA的条件下,发射极面积为0.8μm×12μm的InP HBT截止频率fT为162GHz,最大振荡频率fmax为52GHz,最大直流增益为120,偏移电压为0.10V,击穿电压BVCEO达到3.8V(Ic=0.1μA).这种器件非常适合在高速低功耗方面的应用,例如OEIC接收机以及模拟数字转换器.
Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter
Su Shubing,Liu Xunchun,Liu Xinyu,Yu Jinyong,Wang Runmei,Xu Anhuai,Qi Ming,
Su Shubing
,Liu Xunchun,Liu Xinyu,Yu Jinyong,Wang Runmei,Xu Anhuai,Qi Ming

半导体学报 , 2006,
Abstract: 研究了一种采用新的T型发射极技术的自对准InP/GaInAs单异质结双极晶体管.采用了U型发射极图形结构、选择性湿法腐蚀、LEU以及空气桥等技术,成功制作了U型发射极尺寸为2μm×12μm的器件.该器件的共射直流增益达到170,残余电压约为0.2V,膝点电压仅为0.5V,而击穿电压超过了2V.器件的截止频率达到85GHz,最大振荡频率为72GHz,这些特性使此类器件更适合于低压、低功耗及高频方面的应用.
MajorandTraceElementsofMagnetitefromtheQimantagMetallogenicBelt:InsightsintoEvolutionofOre?formingFluids
YI,Liwen,GU,Xiangping,LU,Anhuai,*LIU,Jianping,LEI,Hao,WANG,Zhiling,CUI,Yu,ZUO,Hongyan,and,SHEN,Can
地质学报 , 2015,
Abstract: Magnetite,asageneticindicatorofores,hasbeenstudiedinvariousdepositsintheworld.Inthispaper,wepresenttexturalandcompositionaldataofmagnetitefromtheQimantagmetallogenicbeltoftheKunlunOrogenicBeltinChina,toprovideabetterunderstandingoftheformationmechanismandgenesisofthemetallogenicbeltandtoshedlightonanalyticalprotocolsfortheinsituchemicalanalysisofmagnetite.Magnetitesamplesfromvariousoccurrences,includingtheore?relatedgranitoidpluton,mineralisedendoskarnandvein?typeironoreshostedinmarinecarbonateintrudedbythepluton,wereexaminedusingscanningelectronmicroscopyandanalysedformajorandtraceelementsusingelectronmicroprobeandlaserablation?inductivelycoupledplasma?massspectrometry.Thefieldandmicroscopeobservationrevealsthatearly?stagemagnetitefromtheHutouyaandKendekekedepositsoccursasmassiveorbandedassemblages,whereaslate?stagemagnetiteisdisseminatedorscatteredintheores.Early?stagemagnetitecontainshighcontentsofTi,V,Ga,AlandlowinMgandMn.Incontrast,late?stagemagnetiteishighinMg,MnandlowinTi,V,Ga,Al.MostmagnetitegrainsfromtheQimantagmetallogenicbeltdepositsexcepttheKendekekedepositplotinthe“Skarn”fieldintheCa+Al+MnvsTi+Vdiagram,farfromtypicalmagmaticFedepositssuchastheDamiaoandPanzhihuadeposits.Accordingtothe(MgO+MnO)?TiO2?Al2O3diagram,magnetitegrainsfromtheKaerquekaandGalinggedepositsandtheNo.7orebodyoftheHutouyadepositshowtypicalcharacteristicsofskarnmagnetite,whereasmagnetitegrainsfromtheKendekekedepositandtheNo.2orebodyoftheHutouyadepositshowcontinuouselementalvariationfrommagmatictypetoskarntype.Thiscompositionalcontrastindicatesthatchemicalcompositionofmagnetiteislargelycontrolledbythecompositionsofmagmaticfluidsandhostrocksoftheoresthathavereactedwiththefluids.Moreover,acombinationofpetrographyandmagnetitegeochemistryindicatesthattheformationofthoseoredepositsintheQimantagmetallogenicbeltinvolvedamagmatic?hydrothermalprocess.
Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy
重碳掺杂p型GaAsSb的GSMBE生长及其特性

Sun Hao,Qi Ming,Xu Anhuai,Ai Likun,Zhu Fuying,
孙浩
,齐鸣,徐安怀,艾立鹍,朱福英

半导体学报 , 2007,
Abstract: 以四溴化碳(CBr4)作为碳掺杂源,采用气态源分子束外延(GSMBE)技术生长了InP衬底上晶格匹配的重碳掺杂p型GaAsSb材料.通过改变CBr4压力,研究了掺杂浓度在(1~20)×1019cm-3范围内的掺杂特性,得到的最大掺杂浓度为2.025×1020cm-3,相应的空穴迁移率为20.4cm2/(V·s).研究了不同生长温度对掺碳GaAsSb外延层组分、晶格质量和表面粗糙度的影响,结果表明480℃是生长优良晶格质量的最优温度.
A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz
截止频率为238GHz的亚微米InGaAs/InP异质结双极晶体管

Jin Zhi,Cheng Wei,Liu Xinyu,Xu Anhuai,Qi Ming,
金智
,程伟,刘新宇,徐安怀,齐鸣

半导体学报 , 2008,
Abstract: 研制成功了一种无微空气桥的亚微米InP基异质结双极晶体管(HBT) . 发展了小于100nm的发射极侧向腐蚀工艺,实现了亚微米的InP基HBT. 发射极宽度的减小有效提高了频率特性,发射极面积为0.8μm×15μm的HBT的电流增益截止频率达到了238GHz. 发展了基极-集电极的侧向过腐蚀工艺,有效减小了结面积,提高了最大振荡频率. Kirk电流密度达到了3.1mA/μm2. 据我们所知,电流增益截止频率是目前国内三端器件中最高的,Kirk电流密度是国内报道的HBT中最高的. 这对于HBT器件在超高速电路中的应用具有十分重要的意义.
Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz
f=210GHz的超高速InP/InGaAs单异质结晶体管

Cheng Wei,Jin Zhi,Liu Xinyu,Yu Jinyong,Xu Anhuai,Qi Ming,
程伟
,金智,刘新宇,于进勇,徐安怀,齐鸣

半导体学报 , 2008,
Abstract: 成功地将Polyimide钝化平坦化工艺应用于InP/InGaAs单异质结晶体管制作工艺中.在Vce=1.1V,Ic=33.5mA的偏置条件下,发射极尺寸为1.4μm×1.5μm的器件,其ft达到210GHz.这种器件非常适合高速低功耗方面的应用,例如超高速数模混合电路以及光学通信系统等.
第1页/共17条
每页显示


Home
Copyright © 2008-2017 Open Access Library. All rights reserved.