OALib Journal期刊

ISSN: 2333-9721



匹配条件: “BOZOMITU” ,找到相关结果约3条。
New Methods of Detecting Voluntary Blinking Used to Communicate with Disabled People
Advances in Electrical and Computer Engineering , 2012, DOI: 10.4316/aece.2012.04007
Abstract: In this paper two new methods of detecting a voluntary blinking and neglecting involuntary blinks are comparatively presented. This technique is used to communicate with disabled people by using the EOG acquisition system. The proposed methods are based on Hilbert transform and envelope detection of the low frequency differential EOG signals. To safely detect voluntary blinking pulses, these methods use an adaptive threshold depending on the level of the low frequency EOG signal. The prototype of the proposed system has been designed, constructed and tested for different subjects from medical care centers, hospitals and treatment units. The experiments that we made with patients have confirmed the performing operation of the proposed EOG acquisition system.
A VLSI Implementation of a New Low Voltage 5th Order Differential Gm-C Low-Pass Filter with Auto-Tuning Loop in CMOS Technology
Advances in Electrical and Computer Engineering , 2011, DOI: 10.4316/aece.2011.01004
Abstract: In this paper a new low voltage 5th order Gm-C Bessel type low-pass filter (LPF) with auto-tuning loop and higher dynamic range, designed in CMOS technology, is presented. The cut-off frequency can be tuned in (10-42)MHz range by modifying the values of the grounded capacitors using a digital logic. The proposed structure is based on an auto-tuning loop in order to maintain the Gm/C ratio independent of the process, supply voltage and temperature variations, assuring the cut-off frequency of the LPF independently of these factors. The proposed 5th order Gm-C Bessel type low-pass filter provides 5% variation of the cut-off frequency in all critical corners, a 400mVpp(diff) dynamic range, THD less than 1% and 21.6mW power consumption from 1.8V supply voltage. The simulations performed in 65nm CMOS process confirm the theoretical results.
A New Linearization Technique Using Multi-sinh Doublet
Advances in Electrical and Computer Engineering , 2009, DOI: 10.4316/aece.2009.02008
Abstract: In this paper a new linearization technique using multi-sinh doublet, implemented with a second generation current conveyor is presented. This new linearization technique is compared with the one based on multi-tanh doublets with linearization series connected diodes on the branches. The comparative study of the two linearization techniques is carried out using both dynamic range analysis, expressed by linearity error and the THD value calculation of output current, and the noise behavior of the two analyzed doublets. For the multi-sinh linearization technique proposed in the paper a method which assures the increase of the dynamic range, keeping the transconductance value constant is presented. This is done by using two design parameters: the number of series connected diodes N, which specifies the desired linear operating range and the k emitters areas ratio of the input stage transistors, which establishes the transconductance value. In the paper is also shown that if the transconductances of the two analyzed doublets are identical, and for the same values of N and k parameters, respectively, the current consumption of the multi-sinh doublet is always smaller than for the multi-tanh doublet.

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