Thin films of Zn100-xCdxO with
x = 0, 2, 4, 6 and 8 at% were deposited by electron
beam evaporation technique on glass substrates. The structural, optical and
electrical properties of Zn100-xCdxO films with x = 4 at%
have been investigated as a function of annealing temperature. Only zinc and
cadmium appeared in the as-deposited films, by annealing their oxides found to
exist. It was observed that the optical properties, such as transmittance, reflectance, optical band
gap, and refractive index of Zn100-xCdx, were strongly affected by annealing temperature.
Other parameters named free carrier concentration, electrical resistivity of
the films were studied as a function of annealing temperature for 4 at% CdO
content. The figure indicates that the best value of annealing temperature is
at 450℃.
Cite this paper
Alkhammash, H. , El-Ghanny, H. A. and El-Raheem, M. M. A. (2018). Structural, Electrical and Optical Characteristics of Zn100–xCdxO Thin Films. Open Access Library Journal, 5, e4687. doi: http://dx.doi.org/10.4236/oalib.1104687.
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