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Estimation Energy Band Gap of Au/ Nano-Crystal Porous Silicon/Mono-Crystal Silicon Heterojunction

DOI: 10.4236/oalib.preprints.1200044, PP. 1-8

Subject Areas: Fundamentals of Material Science, Material Experiment, Nanometer Materials

Keywords: Porous Silicon, Electrochemical, Responsivity, Heterojunction, Quantum Confinement, Energy Gap

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Abstract

Porous silicon layers were fabricated on p-type crystalline silicon wafers using electrochemical etching ECE process. An investigation of the dependence on applied current density to formed PS layer was made. Porosity of the porous silicon layer and thickness were determined gravimetrically. Increasing the etching current density led to increase the surface porosity and thickness.The porosity varies between 44and 77% for current densities between 25 and 85mA/2.The current density-voltage characteristics of Au/nano-crystal porous silicon/mono-crystal silicon heterojunction was examined under 7.5mW/cm2 power density illuminations. From the experimental data set, the maximum value of responsivity and band-gap energy of porous silicon are deduced to be 1.7A/W and 2.07 eV respectively at45 mA/cm2 etching current density. 

Cite this paper

Hadi, H. A. (2014). Estimation Energy Band Gap of Au/ Nano-Crystal Porous Silicon/Mono-Crystal Silicon Heterojunction. Open Access Library PrePrints, 1, e044. doi: http://dx.doi.org/10.4236/oalib.preprints.1200044.

References

[1]  Hadi H.A., Ismail R. A. and Habubi N. F. (2014) Optoelectronic Properties of Porous Silicon Heterojunction Photodetector, Indian J. Phys.,88 1 59-63. DOI 10.1007/s12648-013-0375-4.
[2]  Canham L.T. (1990) Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers, Appl. Phys. Lett., 57, 1046-1048.
[3]  Vinod, P.N.(2003) Processing and Characterization of pn Junction Based Silicon Solar Cells. Ph.D.Thesis University of Delhi,India.
[4]  Mortezaali A., Ramezani sani S., and Javani jooni F. (2009) Correlation between Porosity of Porous Silicon and Optoelectronic Properties, Journal of Non-Oxide Glasses,1,3, 293 – 299.
[5]  Timokhov, D. F. and Timokhov, F. P. (2003) Avalanche Multiplication of Charge Carriers in Nanostructured Porous Silicon, Semiconductor Physics, Quantum Electronics &Optoelectronics,6, 307-310.
[6]  Ciurea M. L.(2005)Quantum Confinement in Nanocrystalline Silicon, journal of Optoelectronics and Advanced Materials, 7, 5, 2341 – 2346.
[7]  Hadi H. A. and Hashim I. H.(2014) Electrical Properties and Schematic Band Diagrams of sn/ps/p-si Heterojunction, Journal of Electron Device ,20,1701-1710.
[8]  Bisi, O. Ossicini, S. and Pavesi, L. (2000) Porous silicon: A quantum Sponge Structure for Silicon Based Optoelectronics, Surface Science Reports,38, 126.
[9]  Ray A. K., Mabrook M. F. and Nabok A. V. (1998) J. Appl. Phys.84(6) 3232.
[10]  Hadi H.A., Ismail R. A. and Habubi N. F. (2012) Structural and morphological study of nanostructured n-type silicon, Iraqi Journal of Physics,10,18,151-158.
[11]  Sze S.M. and Kwok K. (2007) Physics of Semiconductor Devices, Third Edition Published by John Wiley & Sons, Inc., Hoboken, New Jersey. Published simultaneously in Canada,614-618.
[12]  Ismail R. (2010) Fabrication and Characterization of Photodetector Based on Porous Silicon, E-Journal of Surface Science and Nanotechnology,8,388-391.

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